南京大学学报(自然科学版) ›› 2014, Vol. 50 ›› Issue (3): 320.
李扬扬1,陈 鹏1,2*,蒋府龙1,杨国锋1,刘 斌1,谢自立1,修向前1,韩 平1,赵 红1,华雪梅1,施 毅1,张 荣1,郑有炓1
Li Yangyang1, Chen Peng1,2, Jiang Fulong1, Yang Guofeng1, Liu Bin1, Xie Zili1, Xiu Xiangqian1,Han Ping1, Zhao Hong1, Hua Xuemei1, Shi Yi1, Zhang Rong1, Zheng Youdou1
摘要: 主要通过低温和室温变功率光致发光(PL)谱的实验手段,研究了GaN纳米柱和对应薄膜(作为参考)的量子效率表现。实验中发现在室温,激发光功率为0.5 mW时,GaN纳米柱的积分PL强度是薄膜的12.2倍,这表明GaN纳米柱具有比薄膜更高的内量子效率和光引出效率。另外,依据高低温积分PL强度比的方法计算得到激发光功率0.5 mW时,GaN纳米柱的内量子效率低于薄膜,该计算结果违背由实验现象得到的结果,这表明该内量子效率的计算方法是不合适的,因而建立了一种新模型,得到GaN纳米柱和薄膜的内量子效率比随激发光功率的变化规律,结果表明GaN纳米柱的内量子效率表现显著优于薄膜。
[1] Nakamura S. The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes. Science, 1998, 281: 956~961. [2] Zolper J C, Shul R J, Baca A G, et al. Ion-implanted GaN junction field effect transistor. Applied Physics Letters, 1996, 68(16): 2273~2275. [3] Nakamura S, Senoh M, Nagahama S I, et al. Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates. Applied Physics Letters, 1998, 72(16): 2014 ~2016. [4] Nakamura S, Senoh M, Nagahama S I, et al. Present status of InGaN/GaN/AlGaN-based laser diodes. Journal of Crystal Growth, 1998, 190: 820~825. [5] Monroy E, Hamilton M, Walker D, et al. High-quality visible-blind AlGaN p-i-n photodiodes. Applied Physics Letters, 1999, 74(8): 1171~1173. [6] Hung S C, Su Y K, Chang S J, et al. GaN nanocolumns formed by inductively coupled plasmas etching. Physica E, 2005, 28: 115~120. [7] Sekiguchi H, Nakazato T, Kikuchi A, et al. Structural and optical properties of GaN nanocolumns grown on (0001) sapphire substrates by rf-plasma-assisted molecular-beam epitaxy. Journal of Crystal Growth, 2007, 300: 259~262. [8] Billeb A, Grieshaber W, Stocker D, et al. Microcavity effects in GaN epitaxial films and in Ag/GaN/sapphire structures. Applied Physics Letters, 1997, 70(21): 2790~2792. [9] Lee Y J, Chiu C H, Chih C K,et al. Study of the excitation power dependent internal quantum efficiency in InGaN/GaN LEDs grown on patterned sapphire substrate. IEEE Journal of Selected Topics in Quantum Electronics, 2009, 15(4): 1137~1143. [10] Inoue Y, Hoshino T, Takeda S, et al. Strong luminescence from dislocation-free GaN nanopillars. Applied Physics Letters, 2004, 85(12): 2340~2341. [11] Van Nostrand J E, Averett K L, Cortez R, et al. Molecular beam epitaxial growth of high-quality GaN nanocolumns. Journal of Crystal Growth, 2006, 287: 500~503. [12] Sanchez-Paramo J, Calleja J M, Sanchez-Garcia M A, et al. Structural and optical characterization of intrinsic GaN nanocolumns. Physica E, 2002, 13: 1070~1073. [13] Xu B S, Zhai L Y, Liang J, et al. Synthesis and characterization of high purity GaN nanowires. Journal of Crystal Growth, 2006, 291: 34~39. [14] Cheng G S, Zhang L D, Zhu Y, et al. Large-scale synthesis of crystalline gallium nitride nanowires. Applied Physics Letters, 1999, 75(16): 2455~2457. [15] Ryu H Y, Hwang J K, Song D S, et al. Effect of nonradiative recombination on light emitting properties of two-dimensional photonic crystal slab structures. Applied Physics Letters, 2001, 78(9): 1174~1176. [16] Kuo M L, Lee Y J, Thomas C S, et al. Large enhancement of light-extraction efficiency from optically pumped, nanorod light-emitting diodes. Optics Letters, 2009, 34(13): 2078~2080. |
No related articles found! |
|