二硫化钼的电子输运与器件

南京大学学报(自然科学版) ›› 2014, Vol. 50 ›› Issue (3): 280–.

二硫化钼的电子输运与器件

邱浩，王欣然*

出版日期:2014-05-27 发布日期:2014-05-27
作者简介:南京大学固体微结构物理国家重点实验室，南京大学电子科学与工程学院，南京，210093
基金资助:
?国家973计划（2013CBA01600, 2011CB922100, 2010CB923401, 2011CB302004），国家自然科学基金（61261160499, 11274154, 21173040, 11274222, 21373045, 61274114），国家科技重大专项（2011ZX02707），江苏省自然科学基金（BK2012302, BK20130016, BK2012024）

Electron transport in MoS2 and its applications in devices

Qiu Hao, Wang Xinra

Online:2014-05-27 Published:2014-05-27
About author:National Laboratory of Microstructures, School of Electronic Scienceand Engineering,
Nanjing University, Nanjing, 210093, China

摘要/Abstract

摘要： 二硫化钼具有与石墨烯类似的二维层状结构，因其宽禁带、无悬挂键等特性，在以晶体管为代表的逻辑器件领域有广泛的应用；另外，单层二硫化钼为直接带隙半导体，在光电器件中应用也逐渐引起研究人员的关注。本文综述了近期基于二硫化钼晶体管器件电子输运研究、及其在电子、光电器件领域研究进展；除此，对于二维过渡金属二硫属化物中诸如二硫化钨、二硒化钨在器件方面应用也进行了简单的讨论。

Abstract: Molybdenum disulfide (MoS2) has the same layer-stack structure as graphene and shows itself prospects in logic devices, due to its large bandgap and absence of dangling bonds. Besides, single-layer MoS2 with a direct bandgap has recently attracted researchers’ interest in its potential applications in optoelectronics. We review the recent development of MoS2, electron transport in MoS2 transistors and its applications in electronics and optoelectronics. Other than MoS2, we also discuss some novel applications based on other members in two-dimensional transition metal dichalcogenides (TMDCs), especially WS2 and WSe2.

邱浩，王欣然*. 二硫化钼的电子输运与器件[J]. 南京大学学报(自然科学版), 2014, 50(3): 280–.

Qiu Hao, Wang Xinra. Electron transport in MoS2 and its applications in devices[J]. Journal of Nanjing University(Natural Sciences), 2014, 50(3): 280–.

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