用于压电微机电系统的高性能压电薄膜

南京大学学报(自然科学版) ›› 2013, Vol. 49 ›› Issue (1): 32–39.

用于压电微机电系统的高性能压电薄膜

和佐清孝

出版日期:2015-09-30 发布日期:2015-09-30
作者简介: (日本京都大学微工程系，京都,606-8501)

High performance ferroelectric thin films for better
piezoelectric micro electromechanical systems*

Kiyotaka Wasa**

Online:2015-09-30 Published:2015-09-30
About author: (Department of Micro-Enginecring,Kyoto University,Kyoto 606一8501,Japan)

摘要/Abstract

摘要： 压电基(PZT)-ABO_³型钙钦矿陶瓷体材料可用于制作各种压电微机电系统(MEMS).通常
PZT一基陶瓷显示多晶结构，而单晶PZT一基薄膜材料吸取PZT一基陶瓷优良的铁电性，可用于制作薄
膜压电MFMS.在PZT一基材料中，三元钙钦矿，即由二元钙钦矿PZT固溶体掺入添加物(如:Pb(Mg,
Nb) O_³ (PMN)和Pb(Mn, Nb) O_³⁾⁽PMnN))，可用于制作薄膜MEMS，因为掺入的添加物扩展了原二元
钙钦矿PZT的介电和铁电响应.木文研究由射频溅射法外延生长在具有SrRuO_³ /Pt过渡层的(001)
MgO单晶基片上的PZT一基三元配合物(PMnN-PZT)单晶薄膜，发现溅射的PZT一基三元配合物
xPMnN-(1一x)PZT,x=0. 06，显示高密度单晶、而无体单晶的晶粒和界面层结构.溅射的薄膜显示奇
异的铁电性质，即:非常高自极化Pr(Pr=80-100?C，体陶瓷:Pr=20-30?C)，高居里点T_^C (T_^C=500-600 ?C，体陶瓷;T_^C=350-380 ?C)，小介电常数ε *(ε* =100-150，体陶瓷: ε*=800~1300).
这些奇异的铁电性质是所溅射的薄膜结构所固有的，不可能由传统的PZT一基陶瓷得到.最后，对这些
奇异的铁电性质可能应用于压电薄膜MEMS进行了讨论.

Abstract: Piezoelectric(PZT)ABO_³type bulk perovskite ceramics will be useful for making a variety of pie-
zoelectric micro electromechanical systems(MEMS).The PZT-based bulk ceramics show polycrystalline structure.
However,single crystal thin films of the PZT-based materials will extract the excellent ferroelectricity of bulk PZT-
based ceramics for the thin film piezoelectric MEMS. Among the PZT-based bulk materials,the ternary perovskite
solid solutions of binary pcrovskitc PZTand relaxors such as Pb(Mg,Nb)O_³(PMN)and Pb(Mn,Nb)O_³(PMnN)，
will be useful for the fabrication of the thin film MEMS,because the addition of the rclaxors will expand the dielec-
tric and ferroclectric responses of the intrinsic binary perovskite PZT.In this study single crystal thin films of the
PZT-based ternary compounds PMnN-PZT are epitaxially grown on SRO(SrRuO_³)/Pt buffered single crystal(001)
MgO substrates by rf-magnetron sputtering, It is found that the sputtered PZT-based single crystal thin films of ter-
nary pcrovskitc,xPMnN一(1一x)PZT,x=0. 06，exhibit a high density single crystal structure without grains and
interfacial layers like bulk single crystals.The sputtered thin films exhibit exotic ferroclectric properties with ex-
tremely high self polarization P_^r high Curie temperature T_^c ,and small dielectric constant ε*，i.e. P_^r一 80一100 ?C/
cm_²(bulk ceramics;P_^r=20一30 ?C/cm²)，T^_c= 580一600?C(bulk ceramics, T_^c=350一380 ?C)andε*=100一150
(bulk ccramics,ε*=800一1300).There ferroclectric properties could not be achieved in the conventional bulk PZT
based ceramics.The high performance of the exotic ferroclectric properties is intrinsic properties of sputtered thin
film structure. Possible applications of the exotic ferroelectricity for piezoelectric thin film MEMS are discussed.

和佐清孝
. 用于压电微机电系统的高性能压电薄膜[J]. 南京大学学报(自然科学版), 2013, 49(1): 32–39.

Kiyotaka Wasa**. High performance ferroelectric thin films for better
piezoelectric micro electromechanical systems*
[J]. Journal of Nanjing University(Natural Sciences), 2013, 49(1): 32–39.

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