外尔半金属Co3Sn2S2薄膜的制备和电磁性质研究

李首翰, 崔驰, 李威, 杨燚, 黄润生

Thin film preparation and electromagnetic properties of Weyl semi⁃metallic Co3Sn2S2

Shouhan Li, Chi Cui, Wei Li, Yi Yang, Runsheng Huang

表1 SiO2(300 nm)/Si(100)衬底上生长的Co3Sn2S2厚膜(~5 μm)的XRD峰的2θ角、d值、晶面指数、相对强度

Table 1 The crystal plane 2θ angle,d value,relative intensity,index of the XRD of Co3Sn2S2 thick film (~5 μm) grown on SiO2(300 nm)/Si(100) substrate

2θ (degree) d (Å) I (hkl) 20.188 4.395 55.2 (003) 23.438 3.7925 9.0 (012) 33.381 2.682 100.0 (104) 39.435 2.2831 7.9 (015) 41.106 2.1941 54.6 (006) 47.962 1.8952 14.7 (024) 52.512 1.7412 9.8 (107) 53.98 1.6973 7.8 (116) 59.689 1.5479 9.3 (018)