南京大学学报(自然科学版) ›› 2017, Vol. 53 ›› Issue (4): 708.
黄艳艳,于忠卫*,吉正源,钱盈家
Huang Yanyan,Yu Zhongwei*,Ji Zhengyuan,Qian Yingjia
摘要: 对单轴各向异性材料中的负折射进行了讨论,并对具有负折射率的准左手介质(NI-QLHM)表面的古斯-汉森位移进行了详细的理论研究,给出了横电(TE)波和横磁(TM)波入射时的古斯-汉森位移d和穿透深度dz的表达式.对TE入射波的情况进行了数值模拟,结果显示,在μz<0的情况下,频率ω分布在4~6 GHz之间时,各向异性材料为NI-QLHM.而磁导率分量|μz|越小,在NI-QLHM频率区域越容易实现全反射;随着频率的增加,临界角减小,从而发生全反射的入射角的范围增加,同时也将导致准左手化材料的有效折射率减小.结果还显示,对于同一个入射角,随着频率ω的增加,古斯-汉森位移减小,即随着折射率n的减小,古斯-汉森位移减小.而穿透深度dz与古斯-汉森位移d相对应,穿透深度越大,古斯-汉森位移也越大.
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