智能剥离制备GOI材料

南京大学学报(自然科学版) ›› 2017, Vol. 53 ›› Issue (3): 441–.

智能剥离制备GOI材料

赖淑妹1，毛丹枫2，陈松岩2*，李　成2，黄　巍2，汤丁亮3

发布日期:2017-05-30
作者简介: 1.闽南理工学院，泉州，362700；2.厦门大学物理系，厦门，361005；3．厦门大学化学化工学院，厦门，361005
基金资助:
基金项目：国家重点自然科学基金(61534005)，国家自然科学基金(61474081)，国家重点基础研究计划(973计划)(2013CB632103)
收稿日期：2017－04－18
*通讯联系人，Email：sychen@xmu.edu.cn

Fabrication of GermaniumonInsulator by SmartCut? technology

Lai Shumei1，Mao Danfeng2，Chen Songyan2*，Li Cheng2，Huang Wei2，Tang Dingliang3

Published:2017-05-30
About author: 1.Minnan University of Science and Technology，Quanzhou，362700，China；2．Department of Physics，Xiamen University，Xiamen，361005，China；3．College of Chemistry and Chemical Engineering，Xiamen University，Xiamen，361005，China

摘要/Abstract

摘要： 绝缘体上锗(GermaniumonInsulator，GOI)结合了Ge材料及SOI(SilicononInsulator)结构的优点，是一种极具吸引力的Si基新型材料．GOI材料不仅具有高的电子和空穴迁移率，同时其独特的全介质隔离结构可以避免短沟道效应，降低寄生电容和结漏电流．首先研究不同表面处理方法对体Ge与SiO2/Si晶片键合强度的影响，实验结果显示采用N2等离子体活化处理结合氨水溶液(NH4OH∶H2O＝1∶10)亲水性处理，所得到的体Ge与SiO2/Si晶片的键合效果较好，其键合强度>3.8 MPa.利用智能剥离技术(SmartCut?)制备了绝缘体上锗材料．SEM测试显示GOI材料键合质量良好，界面清晰平整，并且Ge层大部分面积无空洞．实验分析得到GOI材料的压应力及XRD(004)摇摆曲线中Ge峰的不对称是由GOI表面的注氢损伤层引起的．真空500 ℃退火30 min对于注入损伤层的应力具有释放作用，但无法修复注入损伤．用溶液(NH4OH∶H2O2∶H2O＝1∶1∶10)腐蚀去除注入损伤层后，应力层被去除，并且获得Ge峰半高宽仅为70.4 arc sec的GOI材料．

关键词: 晶片键合, 智能剥离, 绝缘体上锗(GOI), 退　火, 腐　蚀, 半高宽

Abstract: GermaniumonInsulator(GOI)，which combines the merits of Ge and SOI，is gaining interest as a newly emerged Sibased material.GOI substrate not only has high carrier mobility，but also can avoid the short channel effect，reduce the parasitic capacitance and the leakage current.Several methods to fabricate GOI substrate are available，such as Ge condensation，liquidphase epitaxial(LPE)growth and SmartCut? technology.Among them，SmartCut? technology is more suitable for device fabrication due to its low defect density.However，wafer direct bonding，which requires gaining a high bonding strength at low annealing temperature，is the key step and nodus on the SmartCut? technology.Hence，before bonding，a strict surface treatment intending to improve the bonding strength is required.In this article，the effects of ammonium hydroxide(NH4OH∶H2O＝1∶10)treatment，O2 plasma treatment and N2 plasma treatment on the wafer bonding strength were studied.Results showed that combining N2 plasma treatment to activate Ge and SiO2/Si wafers surface with ammonium hydroxide(NH4OH∶H2O＝1∶10)to improve the Ge surface hydrophilicity，a good bonding quality of Ge/SiO2/Si structure with a strong bonding strength(>3.8 MPa)was received.The GOI substrate with a Ge layer about 1 μm was fabricated by SmartCut? technology.A smooth and distinct Ge/SiO2 interface was revealed by SEM measurement，and no void was formed in a majority of Ge surface as well.A damaged layer around the hydrogen ion range was generated during hydrogen implantation，and it was left on the GOI surface.Experiments show that the compressive stress of the GOI substrate，and the asymmetric of Ge peak in XRD(004)rocking curve were induced by the damaged layer.It was found that postannealing in vacuum at 500 ℃ for 30 min could release the stress of damaged layer，but unable to restore damaged layer.Once the damaged layer was corroded by NH4OH∶H2O2∶H2O＝1∶1∶10 solution，the stress was removed as well.As shown by XRD measurement，the Ge peak profile became symmetric，the full width at half maximum(FWHM)of the Ge(004)peak was reduce to 70.4 arc sec and almost has not residual stress.

Key words: wafer bonding, SmartCut?, GermaniumonInsulator(GOI), postannealing, corrosion, full width at half maximum

赖淑妹, 毛丹枫, 陈松岩, 李　成, 黄　巍, 汤丁亮. 智能剥离制备GOI材料[J]. 南京大学学报(自然科学版), 2017, 53(3): 441–.

Lai Shumei, Mao Danfeng, Chen Songyan, Li Cheng, Huang Wei, Tang Dingliang. Fabrication of GermaniumonInsulator by SmartCut? technology[J]. Journal of Nanjing University(Natural Sciences), 2017, 53(3): 441–.

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