南京大学学报(自然科学版) ›› 2017, Vol. 53 ›› Issue (3): 428.
林圳旭*,宋 捷,黄 锐,王 岩,王怀佩,郭艳青,宋 超
Lin Zhenxu*,Song Jie,Huang Rui,Wang Yan,Wang Huaipei,Guo Yanqing,Song Chao
摘要: 采用甚高频等离子增强化学气相沉积技术,以SiH4,CH4和O2作为反应气源,在150 ℃下制备非晶碳氧化硅薄膜,并对薄膜进行不同条件下快速热退火处理,研究快速热退火处理对其结构和发光特性的影响.实验表明,原始沉积薄膜在可见光全波段展现较强的光致发光特性,经过快速热退火处理后,其发光强度显著增强.薄膜在700 ℃经过快速热退火10 s后,相比于原始沉积薄膜,其发光强度增强6倍,肉眼可见强的蓝绿光光发射.光荧光谱(PL)分析表明,薄膜的发光峰位不随激发波长的改变而发生明显变化.通过结合拉曼(Raman)光谱及傅里叶红外吸收(FTIR)光谱对薄膜的微结构及键合结构分析,分析了不同退火温度和退火时间对其蓝绿光发射增强机制的影响.
[1] Chen K,Huang X,Xu J,et al.Visible photoluminescence in crystallized amorphous Si∶H/SiNx∶H multiquantumwell structures.Applied Physics Letters,1992,61(17):2069-2071. [2] Pavesi L,Dal Negro L,Mazzoleni C,et al.Optical gain in Silicon nanocrystals.Nature,2000,408(6811):440-444. [3] Dal Negro L,Yi J H,Kimerling L C,et al.Light emission from Siliconrich nitride nanostructures.Applied Physics Letters,2006,88(18):183103. [4] Huang R,Chen K,Qian B,et al.Oxygen induced strong green light emission from lowtemperature grown amorphous Silicon nitride films.Applied Physics Letters,2006,89(22):1120. [5] Wang X,Huang R,Song C,et al.Effect of barrier layers on electroluminescence from Si/SiOxNy multilayer structures.Applied Physics Letters,2013,102(8):081114. [6] Lin Z,Huang R,Guo Y,et al.Nearinfrared light emission from Sirich oxynitride nanostructures.Optical Materials Express,2014,4(4):816-822. [7] Mu W,Zhang P,Xu J,et al.Directcurrent and alternatingcurrent driving Si quantum dotsbased light emitting device.IEEE Journal of Selected Topics in Quantum Electronics,2014,20(4):206-211. [8] Wang F,Li D,Yang D,et al.Enhancement of lightextraction efficiency of SiNx light emitting devices through a rough Ag island film.Applied Physics Letters,2012,100(3):031113. [9] Lin G R,Pai Y H,Lin C T,et al.Comparison on the electroluminescence of Sirich SiNx and SiOx based lightemitting diodes.Applied Physics Letters,2010,96(26):263514. [10] Pellegrino P,PerezRodriguez A,Garrido B,et al.Timeresolved analysis of the white photoluminescence from SiO2 films after Si and C coimplantation.Applied Physics Letters,2004,84(1):25-27. [11] Nikas V,Gallis S,Huang M,et al.The origin of white luminescence from Silicon oxycarbide thin films.Applied Physics Letters,2014,104(6):061906. [12] Tabassum N,Nikas V,Ford B,et al.Timeresolved analysis of the white photoluminescence from chemically synthesized SiCxOy thin films and nanowires.Applied Physics Letters,2016,109(4):043104. [13] Ding Y,Shirai H,He D.White light emission and electrical properties of Silicon oxycarbidebased metaloxidesemiconductor diode.Thin Solid Films,2011,519(8):2513-2515. [14] Bellocchi G,Iacona F,Miritello M,et al.SiOC thin films:An efficient light source and an ideal host matrix for Eu2+ ion.Optics Express,2013,21(17):20280-20290. [15] Gallis S,Huang M,Kaloyeros A E.Efficient energy transfer from Silicon oxycarbide matrix to Er ions via indirect excitation mechanisms.Applied Physics Letters,2007,90(16):161914. [16] Lin Z,Guo Y,Song C,et al.Influence of the oxygen content in obtaining tunable and strong photoluminescence from lowtemperature grown Silicon oxycarbide films.Journal of Alloys and Compounds,2015,633:153-156. [17] Song C,Huang R,Wang X,et al.Effects of hydrogen on photoluminescence properties of aSiNx:H films prepared by VHFPECVD.Applied Surface Science,2011,258(4):1290-1293. [18] Song D,Cho E C,Cho Y H,et al.Evolution of Si(and SiC)nanocrystal precipitation in SiC matrix.Thin Solid Films,2008,516(12):3824-3830. [19] Zhang H,Xu Z.Structural and optical properties of fourhexagonal polytype nanocrystalline Silicon carbide films deposited by plasma enhanced chemical vapor deposition technique.Thin Solid Films,2004,446(1):99-105. [20] Huang R,Lin Z,Guo Y,et al.Bright red,orangeyellow and white switching photoluminescence from Silicon oxynitride films with fast decay dynamics.Optical Materials Express,2014,4(2):205-212. [21] Basa D K,Ambrosone G,Coscia U,et al.Crystallization of hydrogenated amorphous Silicon carbon films with laser and thermal annealing.Applied Surface Science,2009,255(10):5528-5531. [22] Gallis S,Nikas V,Huang M,et al.Comparative study of the effects of thermal treatment on the optical properties of hydrogenated amorphous Siliconoxycarbide.Journal of Applied Physics,2007,102(2):24302-24302. [23] Grill A.Plasma enhanced chemical vapor deposited SiCOH dielectrics:from lowk to extreme lowk interconnect materials.Journal of Applied Physics,2003,93(3):1785-1790. [24] Lin G R,Lin C J,Lin C K,et al.Oxygen defect and Si nanocrystal dependent whitelight and nearinfrared electroluminescence of Siimplanted and plasmaenhanced chemicalvapor depositiongrown Sirich SiO2.Journal of Applied Physics,2005,97(9):094306. [25] Poindexter E H,Caplan P J.Electron spin resonance of inherent and process induced defects near the Si/SiO2 interface of oxidized Silicon wafers.Journal of Vacuum Science & Technology A,1988,6(3):1352-1357. |
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