南京大学学报(自然科学版) ›› 2017, Vol. 53 ›› Issue (3): 392.
董恒平1,2,3*,陈坤基2,3,宗 波1,井娥林1,王 昊1,窦如凤1,郭 燕1,徐 骏2,3
Dong Hengping1,2,3*,Chen Kunji2,3,Zong Bo1,Jing Elin1,Wang Hao1,Dou Rufeng1,Guo Yan1,Xu Jun2,3
摘要: 在室温下利用等离子体增强化学气相淀积(PECVD)方法制备出非晶掺氧氮化硅(a SiNx∶O)薄膜.通过改变硅烷(SiH4)和氨气(NH3)流量比R,可实现薄膜光致发光(PL)峰位在2.06~2.79 eV可见光能量范围内的波长调制.光吸收谱中光吸收峰位与PL峰位重叠,表明薄膜发光来源于光吸收边以下0.65 eV左右处的缺陷态.通过对傅里叶变换红外光谱(FTIR)的键浓度分析和X射线光电子能谱(XPS)Si 2p峰的分峰拟合,发现薄膜PL强度的增强与NSi O键合浓度的升高紧密相关.R=1∶4时,PL强度与NSi O键合浓度同时达到最大.进一步证明了a SiNx∶O薄膜中的发光缺陷态与NSi O键合结构密切相关.此外,PL峰位随流量比R的增大而发生红移的现象可能源自于NSi O组态转变造成的缺陷态密度最大位置处的能级偏移和光学带隙变窄引起的价带顶上移.
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