镶嵌于非晶碳化硅中的高导电性掺杂纳米晶硅的制备与电学性能研究

南京大学学报(自然科学版) ›› 2016, Vol. 52 ›› Issue (5): 780–.

镶嵌于非晶碳化硅中的高导电性掺杂纳米晶硅的制备与电学性能研究

季　阳，单　丹，钱明庆，李　伟，徐　骏*，陈坤基

出版日期:2016-09-24 发布日期:2016-09-24
作者简介: 固体微结构物理国家重点实验室，南京大学电子科学与工程学院，南京，210093
基金资助:
基金项目：国家自然科学基金(11274155)，江苏省“333”工程(BRA2015284)，江苏省2015年度普通高校研究生实践创新计划(SJLX15_0019)
收稿日期：2016－05－05
*通讯联系人，Email：junxu@nju.edu.cn

Formation and electrical properties of high conductively doped nanocrystalline silicon embedded in amorphous silicon carbide

Ji Yang，Shan Dan，Qian Mingqing，Li Wei，Xu Jun*，Chen Kunji

Online:2016-09-24 Published:2016-09-24
About author: National Laboratory of Solid State Microstructures，School of Electronic Science and Engineering，Nanjing University，Nanjing，210093，China

摘要/Abstract

摘要： 对不同C/Si比的掺磷非晶碳化硅薄膜的光电性质进行了研究．发现对于原始样品，随着C/Si比的减小，材料的光学带隙逐渐减小，暗电导率逐渐增大．对于1000 ℃退火后的样品，材料的暗电导率有了6到7个数量级的提高．随着膜中C/Si比的减小，材料中Si－C键密度逐渐减少，结晶度提高，光学带隙有所增大，多数载流子迁移率增大，暗电导率逐渐增大．此外，薄膜中组分比的改变对材料中掺杂磷原子的激活效率以及材料的电导率激活能等都会产生相应影响．随着C/Si比的减小，退火后样品的掺杂磷原子的激活效率随之改变，表现为载流子浓度先增大后减小的趋势，这与材料的结晶程度有很大的关系．退火后样品的电导率激活能随着C/Si比的减小而逐渐减小，费米能级逐渐靠近导带底，最后位于导带底甚至进入导带，使材料表现为重掺杂的特性．

Abstract: The optical and electrical properties of phosphorus doped silicon carbide thin films with various C/Si ratio were studied before and after thermally annealing.It is found that with decreasing the C/Si ratio for asdeposited samples，the optical band gap is gradually decreased and dark conductivity increased accordingly.As high as 6 to 7 orders of magnitude of material dark conductivity improvement is a remarkable result of 1000 ℃ annealing.With decreasing the C/Si ratio for annealed samples，the Si－C bond density is decreased in company with the enhancement of crystal degree and optical band gap，and also with improvements of main carrier mobility as well as dark conductivity.Besides，influences of the C/Si ratio to the phosphorus dopant activation effect and to the material conductivity activation energy are also significant.The dopant activation effect changes in the form of the carrier concentration，which increases firstly and then decreases slightly with reducing the C/Si ratio，representing a close relation to the crystal degree.Furthermore，the conductivity activation energy of annealed samples is reduced with decreasing the C/Si ratio，the Fermi level consequently rises very close to the bottom of the conduction band or even enters into the conduction band，indicating the formation of heavily doped semiconductor materials.

季　阳，单　丹，钱明庆，李　伟，徐　骏*，陈坤基. 镶嵌于非晶碳化硅中的高导电性掺杂纳米晶硅的制备与电学性能研究[J]. 南京大学学报(自然科学版), 2016, 52(5): 780–.

Ji Yang，Shan Dan，Qian Mingqing，Li Wei，Xu Jun*，Chen Kunji. Formation and electrical properties of high conductively doped nanocrystalline silicon embedded in amorphous silicon carbide[J]. Journal of Nanjing University(Natural Sciences), 2016, 52(5): 780–.

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