南京大学学报(自然科学版) ›› 2016, Vol. 52 ›› Issue (3): 550557.
曹 攀,朱广浩*,金飚兵*
Cao Pan,Zhu Guanghao*,Jin Biaobing*
摘要: InGaAs半导体单光子探测器具备探测性能强,集成度高等优势,在光谱分析和量子通信等领域有广泛的应用.本文以ID Quantique公司出品的ID201半导体单光子计数器为研究对象,结合计数器核心部件雪崩光电二极管的工作原理探究其计数光子时的内部过程,推导出每秒钟光子计数值和该计数器几个重要参数触发频率(trigger frequency),门脉冲宽度(gate width),门强制关闭时间(dead time),探测效率(detection efficiency)之间的数学表达式.推导过程着重分析了计数门脉冲的关闭效应对光子探测概率的影响.首先利用泊松分布求解光子计数值与探测效率(detection efficiency)之间的关系,然后将计数过程分成两大部分,分析计数结果与门强制关闭时间(dead time)之间关系.求解得表达式后,利用1550 nm激光器作为ID201的输入光源,在各种不同实验条件下,对该表达式的正确性进行了检验.
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