南京大学学报(自然科学版) ›› 2022, Vol. 58 ›› Issue (2): 345–355.doi: 10.13232/j.cnki.jnju.2022.02.018

• • 上一篇    

宽带低附加相移可变增益放大器

肖慧华1, 马凯学1(), 傅海鹏1, 陆敏2,3   

  1. 1.天津大学微电子学院, 天津, 300072
    2.中兴通讯股份有限公司, 深圳, 518057
    3.移动网络和移动多媒体技术国家重点实验室, 深圳, 518057
  • 收稿日期:2021-10-11 出版日期:2022-03-30 发布日期:2022-04-02
  • 通讯作者: 马凯学 E-mail:makaixue@tju.edu.cn
  • 作者简介:E⁃mail：makaixue@tju.edu.cn
  • 基金资助:
    广东省重点领域研发计划(2019B10156003)

A wideband low additional phase shift variable gain amplifier

Huihua Xiao1, Kaixue Ma1(), Haipeng Fu1, Min Lu2,3   

  1. 1.School of Microelectronics, Tianjin University, Tianjin, 300072, China
    2.ZTE Corporation, Shenzhen, 518057, China
    3.State Key Laboratory of Mobile Network and Mobile Multimedia Technology, Shenzhen, 518057, China
  • Received:2021-10-11 Online:2022-03-30 Published:2022-04-02
  • Contact: Kaixue Ma E-mail:makaixue@tju.edu.cn

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摘要：

基于130 nm BiCMOS（Bipolar Complementary Metal Oxide Semiconductor）工艺提出一款超宽带低附加相移可变增益放大器.该设计采用可变增益放大器和开关衰减器的组合结构，其中可变增益放大器在宽带、高效率的反馈式放大器的基础上通过改变偏置实现增益控制，而开关衰减器的应用在拓宽增益控制范围的同时减小了偏置变化范围，从而减小了不同增益状态下的附加相移.提取版图寄生参数后的仿真结果表明：在1.6 V供电电压下，该可变增益放大器在3.5~11 GHz范围内增益平坦度小于±0.75 dB，增益控制范围为-22~10 dB，增益步进值为0.5 dB，噪声系数小于6.5 dB，不同增益状态下的附加相移小于±5°，电路输出1 dB压缩点大于12 dBm，动态功耗小于155 mW.该可变增益放大器拓扑在满足项目需求的同时为减小可变增益放大器的附加相移提供了一种思路.

关键词: 可变增益放大器, BiCMOS, 附加相移, 宽带

Abstract:

A wideband low additional phase shift variable gain amplifier based on 130 nm BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) process is proposed. The design adopts a combined structure of variable gain amplifer and switching attenuator. The variable gain amplifier is based on a broadband，high?efficiency feedback amplifier，and the gain control is realized by changing the bias current. The application of the switching attenuator broadens the gain range as well as reduces the bias variation range，thus optimizes the additional phase shift under different states. The simulated results after layout parasitic parameters extraction show that，under 1.6 V supply voltage，the gain flatness of the variable gain amplifier is less than ±0.75 dB in the frequency range of 3.5~11 GHz. The gain range is -22~10 dB，and the gain step value is 0.5 dB. The noise figure is less than 6.5 dB，and the additional phase shift under different gain states is less than ±5°. The output power at 1 dB compression point of the circuit is greater than 12 dBm，and the dynamic power consumption is less than 155 mW. This variable gain amplifier topology not only meets the requirements of the project，but also provides an idea for reducing the additional phase shift of the variable gain amplifier.

Key words: variable gain amplifier, BiCMOS, additional phase shift, broadband

中图分类号: 

  • TN722.7

图1

VGA整体框架图(a)及原理图(b)"

图2

FBVGC的原理图(a)及交流小信号模型(b)"

图3

FBVGC最大可用增益仿真结果"

图4

FBVGA及其匹配网络原理图：(a) FBVGA；(b)输入匹配网络；(c)输出匹配网络"

图5

带级间串联电感的两级反馈式可变增益放大器原理图"

图6

带级间串联电感和不带级间串联电感的两级可变增益放大器相位响应对比"

图7

可变增益放大器和开关衰减器组合结构"

图8

8 dB开关衰减器S参数仿真结果"

图9

偏置电路原理图"

图10

电路版图"

图11

VGA的小信号响应"

图12

VGA的温度响应"

图13

不同工艺角下的增益"

表1

VGA的大信号仿真结果"

频率

(GHz)

增益压缩

(dB)

输出功率

(dBm)

直流功耗

(mW)

效率
31.00812.26130.811.72%
51.00713.34150.813.34%
71.00713.55155.213.73%
91.00913.38150.913.57%
111.00913144.612.88%

表2

相似频段VGA性能对比"

参数本文*Shin et al[11]Chen et al[12]Liang et al[18]Sayginer and Rebeiz[19]
工作频带(GHz)3.5~111.6~12.12.2~13.60.8~112~16
增益范围-20~12-18~20-20~1814~20-5~3
增益控制方式(位数)数字（6位）模拟模拟模拟数字（3位）
增益步进(dB)0.5---2
最大增益误差(dB)±0.5---0.5
OP1 dB (dBm)12<-2-3.350

是否优化附加相移

(最大附加相移)

是（±5°）否否否是（3.5°）
噪声系数(dB)76.54.9~6.32.4-
直流功耗(mW)15540259427.5
效率10.6%<1.6%1.9%3.453.65
面积(mm2)0.961.430.58--
工艺0.13 μm BiCMOS0.35 μm BiCMOS0.18 μm CMOS0.15 μm InGaAs pHEMT0.13 μm BiCMOS
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