南京大学学报(自然科学版) ›› 2019, Vol. 55 ›› Issue (5): 740749.doi: 10.13232/j.cnki.jnju.2019.05.005
Zhihui Pei1,2,Guoxuan Qin1,2()
摘要:
系统地对基于高介电常数材料HfO2和传统的介质材料SiO2这两种不同栅介质层材料的硅薄膜晶体管进行建模并对不同尺寸和温度条件下的薄膜晶体管的工作特性进行了研究.获得了不同沟道长度和沟道宽度,不同栅介质层厚度和不同温度条件下的薄膜晶体管的工作特性曲线.通过对比发现,薄膜晶体管的饱和电流与沟道长度和栅介质层厚度成反比,与沟道宽度成正比,与理论计算一致.随着温度的升高,薄膜晶体管的载流子迁移率和阈值电压都在逐渐减小,因而饱和电流值逐渐减小;在相同栅介质层尺寸和温度条件下,基于HfO2的薄膜晶体管相对于基于SiO2的薄膜晶体管具有更高的电流开关比,更低的阈值电压和更小的泄漏电流.因此,基于高介电常数栅介质材料的薄膜晶体管相对于基于SiO2的薄膜晶体管具有更好的性能.
中图分类号:
1 | 周郁明,刘航志,杨婷婷 等 . 碳化硅MOSFET电路模型及其应用. 西安电子科技大学学报,2018,v.45(03):103-107,135. |
Zhou Y M , Liu H Z , Yang T T ,et al . Circuit model of silicon carbide MOSFET and its application. Journal of Xidian University,2018,v.45(03):103-107,135. | |
2 | 恩云飞,刘远,何玉娟 等 . 非晶硅薄膜晶体管关态电流的物理模型. 西安电子科技大学学报,2014(5):135-140. |
En Y F , Liu Y , He Y J ,et al . Physical model of off?state current of amorphous silicon thin film transistor. Journal of Xidian University,2014(5):135-140. | |
3 | Qin G X , Zhang Y B , Lan K B ,et al . High?performance flexible single?crystalline silicon nanomembrane thin?Film transistors with highk Nb2O5?Bi2O3?MgO ceramics as gate dielectric on a plastic substrate. ACS Applied Materials & Interfaces,2018,10(15):12798-12806. |
4 | Liu H , Han G Q , Xu Y ,et al . High?mobility Ge pMOSFETs with crystalline ZrO2 Dielectric. IEEE Electron Device Letters,2019,40(3):371-374. |
5 | Han G Q , Wang Y B , Liu Y ,et al . GeSn quantum well P?channel tunneling FETs fabricated on Si(001) and (111) with improved subthreshold swing. IEEE Electron Device Letters,2016,37(6):701-704. |
6 | Ma P F , Sun J M , Liang G D ,et al . Half?volt operation of IGZO thin?film transistors enabled by ultrathin HfO2 gate dielectric. Appllied Physics Letters,2018,113(6):063501. |
7 | Muhammad K , Wassem R , Saira R ,et al . Simulation and analysis of static and dynamic performance of normally?off TIVJFET using Sentaurus TCAD. Materials Today:Proceedings,2015, 2(10):5720-5725. |
8 | 王云波 . AlGaN/GaN HEMT耐压结构设计与特性研究研究. 博士学位论文. 电子科技大学,2015. |
Wang Y B . Research on design and characteristics of pressure?resistant structure of AlGaN/GaN HEMT. Ph .D. Dissertation.University of Electronic Science and Technology of China,2015. | |
9 | Ajayan J , Nirmal D . 20 nm high performance enhancement mode InP HEMT with heavily doped S/D regions for future THz applications. Superlattices and Microstructures,2016,100:526-534. |
10 | Baidya A , Krishnan V , Baishya S ,et al . Effect of thin gate dielectrics and gate materials on simulated device characteristics of 3D double gate JNT. Superlattices and Microstructures,2015,77:209-218. |
11 | 刘永杰 . SOI FinFET器件与组合逻辑电路单粒子效应研究. 硕士学位论文. 西安电子科技大学,2015. |
Liu Y J . Research on single event effect of SOI FinFET device and combinational logic circuit. Master Dissertation. Xidian University,2015. | |
12 | 周永辉 . 使用Sentaurus TCAD软件设计和研究0.18μmH栅P?Well SOI MOSFET器件. 电子世界,2013(21):95-96. |
Zhou Y H . Design and study of 0.18μmH gate P?Well SOI MOSFET device using Sentaurus TCAD software. Electronic World,2013(21):95-96. | |
13 | 杨变霞,李平,刘洋 . NMOS晶体管的总剂量辐射效应研究. 固体电子学研究与进展,2015,35(02):187-190,201. |
Yang Z X , Li P , Liu Y . Study on total dose radiation effect of NMOS Transistors. Research and Progress of Solid State Electronics,2015,35(02):187-190,201. | |
14 | 王倩琼 . 新型MOSFET和TFET器件的辐照可靠性研究. 博士学位论文. 西安电子科技大学,2017. |
Wang Q Q . Radiation reliability of new MOSFET and TFET devices. Ph .D. Dissertation. Xidian University,2017. | |
15 | 廖晨光,郝敏如 . 单轴应变Si纳米NMOSFET电特性优化. 电子科技,2018,31(07):46-50. |
Liao C G , Hao M R . Optimization of electrical characteristics of uniaxial strained Si nano NMOSFET. Electronic Science & Technology,2018,31(07):46-50. | |
16 | 余洋,乔明 . 一种SOILDMOS器件辐射效应研究研究. 电子与封装,2018,18(07):32-34,38. |
Yu Y , Qiao M . Research on radiation effects of SOILDMOS devices. Electronics & Packaging,2018,18(07):32-34,38. | |
17 | Passeri D , Moscatelli F , Morozzi A ,et al . Modeling of radiation damage effects in silicon detectors at high fluences HL?LHC with Sentaurus TCAD. Nuclear Instruments and Methods in Physics Research A,2016,824:443-445. |
18 | 汪礼胜 .堆栈高k栅介质(In)GaAsMOS器件电子迀移率模型及界面特性研究. 博士学位论文. 华中科技大学,2015. |
Wang L S . Electron mobility model and interface characteristics of stacked high?k gate dielectric (In)GaAsMOS devices. Ph .D. Dissertation. Huazhong University of Science and Technology,2015. | |
19 | Sanudin R , Sulong M S , Morsin M ,et al . Simulation study on NMOS gate length variation using TCAD Tool. Symposium on Quality Electronic Design. IEEE,2009:276-279. |
20 | Fischetti M V , Neumayer D A , Cartier E A . Effective electron mobility in Si inversion layers in MOS systems with a high?k insulator: The role of remote phonon scattering. Ibm Corporation,2007. |
21 | Saito S , Torll K , Shimamoto Y ,et al . Remote?charge?scattering limited mobility in field?effect transistors with SiO2 and Al2O3∕SiO2 gate stacks. Jourbal of Applied Physics,2005,98(11):113706. |
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