|本期目录/Table of Contents|

[1]赖淑妹,毛丹枫,陈松岩*,等. 智能剥离制备GOI材料[J].南京大学学报(自然科学),2017,53(3):441.[doi:10.13232/j.cnki.jnju.2017.03.009]
 Lai Shumei,Mao Danfeng,Chen Songyan*,et al. Fabrication of Germanium­on­Insulator by Smart­Cut? technology[J].Journal of Nanjing University(Natural Sciences),2017,53(3):441.[doi:10.13232/j.cnki.jnju.2017.03.009]
点击复制

 智能剥离制备GOI材料()
     

《南京大学学报(自然科学)》[ISSN:0469-5097/CN:32-1169/N]

卷:
53
期数:
2017年第3期
页码:
441
栏目:
出版日期:
2017-06-01

文章信息/Info

Title:
 Fabrication of Germanium­on­Insulator by Smart­Cut? technology
作者:
 赖淑妹1毛丹枫2陈松岩2*李 成2黄 巍2汤丁亮3
 1.闽南理工学院,泉州,362700;2.厦门大学物理系,厦门,361005;3.厦门大学化学化工学院,厦门,361005
Author(s):
 Lai Shumei1Mao Danfeng2Chen Songyan2*Li Cheng2Huang Wei2Tang Dingliang3
 1.Minnan University of Science and Technology,Quanzhou,362700,China;2.Department of Physics,Xiamen University,Xiamen,361005,China;3.College of Chemistry and Chemical Engineering,Xiamen University,Xiamen,361005,China
关键词:
 晶片键合智能剥离绝缘体上锗(GOI)退 火腐 蚀半高宽
Keywords:
 wafer bondingSmart­Cut?Germanium­on­Insulator(GOI)post­annealingcorrosionfull width at half maximum
分类号:
TN304.055
DOI:
10.13232/j.cnki.jnju.2017.03.009
文献标志码:
A
摘要:
 绝缘体上锗(Germanium­on­Insulator,GOI)结合了Ge材料及SOI(Silicon­on­Insulator)结构的优点,是一种极具吸引力的Si基新型材料.GOI材料不仅具有高的电子和空穴迁移率,同时其独特的全介质隔离结构可以避免短沟道效应,降低寄生电容和结漏电流.首先研究不同表面处理方法对体Ge与SiO2/Si晶片键合强度的影响,实验结果显示采用N2等离子体活化处理结合氨水溶液(NH4OH∶H2O=1∶10)亲水性处理,所得到的体Ge与SiO2/Si晶片的键合效果较好,其键合强度>3.8 MPa.利用智能剥离技术(Smart­Cut?)制备了绝缘体上锗材料.SEM测试显示GOI材料键合质量良好,界面清晰平整,并且Ge层大部分面积无空洞.实验分析得到GOI材料的压应力及XRD(004)摇摆曲线中Ge峰的不对称是由GOI表面的注氢损伤层引起的.真空500 ℃退火30 min对于注入损伤层的应力具有释放作用,但无法修复注入损伤.用溶液(NH4OH∶H2O2∶H2O=1∶1∶10)腐蚀去除注入损伤层后,应力层被去除,并且获得Ge峰半高宽仅为70.4 arc sec的GOI材料.
Abstract:
 Germanium­on­Insulator(GOI),which combines the merits of Ge and SOI,is gaining interest as a newly emerged Si­based material.GOI substrate not only has high carrier mobility,but also can avoid the short channel effect,reduce the parasitic capacitance and the leakage current.Several methods to fabricate GOI substrate are available,such as Ge condensation,liquid­phase epitaxial(LPE)growth and Smart­Cut? technology.Among them,Smart­Cut? technology is more suitable for device fabrication due to its low defect density.However,wafer direct bonding,which requires gaining a high bonding strength at low annealing temperature,is the key step and nodus on the Smart­Cut? technology.Hence,before bonding,a strict surface treatment intending to improve the bonding strength is required.In this article,the effects of ammonium hydroxide(NH4OH∶H2O=1∶10)treatment,O2 plasma treatment and N2 plasma treatment on the wafer bonding strength were studied.Results showed that combining N2 plasma treatment to activate Ge and SiO2/Si wafers surface with ammonium hydroxide(NH4OH∶H2O=1∶10)to improve the Ge surface hydrophilicity,a good bonding quality of Ge/SiO2/Si structure with a strong bonding strength(>3.8 MPa)was received.The GOI substrate with a Ge layer about 1 μm was fabricated by Smart­Cut? technology.A smooth and distinct Ge/SiO2 interface was revealed by SEM measurement,and no void was formed in a majority of Ge surface as well.A damaged layer around the hydrogen ion range was generated during hydrogen implantation,and it was left on the GOI surface.Experiments show that the compressive stress of the GOI substrate,and the asymmetric of Ge peak in XRD(004)rocking curve were induced by the damaged layer.It was found that post­annealing in vacuum at 500 ℃ for 30 min could release the stress of damaged layer,but unable to restore damaged layer.Once the damaged layer was corroded by NH4OH∶H2O2∶H2O=1∶1∶10 solution,the stress was removed as well.As shown by XRD measurement,the Ge peak profile became symmetric,the full width at half maximum(FWHM)of the Ge(004)peak was reduce to 70.4 arc sec and almost has not residual stress.

参考文献/References:

 [1] Lieten R R,Degroote S,Kuijk M,et al.Ohmic contact formation on n­type Ge.Applied Physics Letters,2008,92(2):2106.
[2] Akatsu T,Deguet C,Sanchez L,et al.Germanium­on­insulator(GeOI)substrates - a novel engineered substrate for future high performance devices.Materials Science in Semiconductor Processing,2006,9(4):444-448.
[3] Jin H Y,Liu E Z,Cheung N W.Fabrication and characteristics of germanium­on­insulator substrates.In:2008 9th IEEE International Conference on Solid­State and Integrated­Circuit Technology(ICSICT).New York,USA:IEEE Press,2008:662-668.
[4] Tracy C J,Fejes P,Theodore N D,et al.Germanium­on­insulator substrates by wafer bonding.Journal of Electronic Materials,2004,33(8):886-892.
[5] Yu R,Byun K Y,Ferain I,et al.Fabrication of germanium­on­insulator by low temperature direct wafer bonding.In:2010 10th IEEE International Conference on Solid­State and Integrated Circuit Technology(ICSICT).New York,USA:IEEE Press,2010:953-955.
[6] Shen J X,Zhang X X,Ye T C,et al.Ge/SiO2 low temperature wafer bonding.In:2010 10th IEEE International Conference on Solid­State and Integrated Circuit Technology(ICSICT).New York,USA:IEEE Press,2010:1557-1559.
[7] Nakaharai S,Tezuka T,Hirashita N,et al.The generation of crystal defects in Ge­on­insulator(GOI)layers in the Ge­condensation process.Semiconductor Science and Technology,2006,22(1):S103.
[8] Nakaharai S,Tezuka T,Hirashita N,et al.Formation process of high­purity Ge­on­insulator layers by Ge­condensation technique.Journal of Applied Physics,2009,105(2):024515.
[9] Liu Y,Deal M D,Plummer J D.High­quality single­crystal Ge on insulator by liquid­phase epitaxy on Si substrates.Applied Physics Letters,2004,84(14):2563-2565.
[10] Yu H Y,Cheng S,Park J H,et al.High quality single­crystal germanium­on­insulator on bulk Si substrates based on multistep lateral over­growth with hydrogen annealing.Applied Physics Letters,2010,97(6):063503.
[11] Deguet C,Dechamp J,Morales C,et al.200 mm germanium­on­insulator(GeOI)structures realized from epitaxial wafers using the smart cut? technology.Proceedings Electrochemical Society,2005:78-88.
[12] Deguet C,Sanchez L,Akatsu T,et al.Fabrication and characterisation of 200 mm germanium­on­insulator(GeOI)substrates made from bulk germanium.Electronics Letters,2006,42(7):1.
[13] Ferain I P,Byun K Y,Colinge C A,et al.Low temperature exfoliation process in hydrogen­implanted germanium layers.Journal of Applied Physics,2010,107(5):054315.
[14] Taraschi G,Pitera A J,Fitzgerald E A.Strained Si,SiGe,and Ge on­insulator:Review of wafer bonding fabrication techniques.Solid­State Electronics,2004,48(8):1297-1305.
[15] Bhattacharya S,Datta A,Berg J M,et al.Studies on surface wettability of poly(dimethyl)siloxane(PDMS)and glass under oxygen­plasma treatment and correlation with bond strength.Journal of Microelectromechanical Systems,2005,14(3):590.
[16] Bäcklund Y,Hermansson K,Smith L.Bond­strength measurements related to silicon surface hydrophilicity.Journal of the Electrochemical Society,1992,139(8):2299
[17] Suni T,Henttinen K,Suni I,et al.Effects of plasma activation on hydrophilic bonding of Si and SiO2.Journal of the Electrochemical Society,2002,149(6):G348
[18] Lai S M,Mao D F,Huang Z W,et al.A thin transition film formed by plasma exposure contributes to the germanium surface hydrophilicity.Journal of Semiconductors,2016,37(9):093004.
[19] 陈城钊.Si基Ge材料的外延生长、原位掺杂及其光电性质.博士学位论文.厦门:厦门大学,2012.(Chen C Z.Epitaxial growth,in situ doping and optical and electrical properties of Ge on Si substrates.Ph.D.Dissertation.Xiamen:Xiamen University,2012.)
[20] Bracht H,Brotzmann S.Atomic transport in germanium and the mechanism of arsenic diffusion.Materials Science in Semiconductor Processing,2006,9(4):471-476.
[21] Brotzmann S,Bracht H,Hansen J L,et al.Diffusion and defect reactions between donors,C,and vacancies in Ge.I.Experimental Results.Physical Review B,2008,77(23):235207.
[22] Bracht H.Self­and foreign­atom diffusion in semiconductor isotope heterostructures.Ⅰ.Continuum theoretical calculations.Physical Review B,2007,75(3):035210.
[23] Jain J R,Ly­Gagnon D S,Balram K C,et al.Tensile­strained germanium­on­insulator subs­trate fabrication for silicon­compatible optoelec­tronics.Optical Materials Express,2011,1(6):1121-1126.

相似文献/References:

备注/Memo

备注/Memo:
 基金项目:国家重点自然科学基金(61534005),国家自然科学基金(61474081),国家重点基础研究计划(973计划)(2013CB632103)
收稿日期:2017-04-18
*通讯联系人,E­mail:sychen@xmu.edu.cn
更新日期/Last Update: 2017-05-30