南京大学学报(自然科学版) ›› 2017, Vol. 53 ›› Issue (3): 387–.

• •    下一篇

有序可控纳米银球阵列对a­SiNx∶O薄膜光致发光增强的研究

徐奇峰，张鑫鑫，马忠元*，吴仰晴，林泽文，徐　岭，李　伟，陈坤基，黄信凡，徐　骏，冯　端   

  • 发布日期:2017-05-30
  • 作者简介: 南京大学电子科学与工程学院，南京，210093
  • 基金资助:
     基金项目：国家重点基础研究发展计划(2010CB934402)，国家自然科学基金(61071008，61571221，61634003，11374153)，高等学校博士学科点专项科研基金(20130091110024)，江苏高校优势学科建设工程项目，江苏省六大人才高峰项目(DZXX－001)
    收稿日期：2016－11－09
    *通讯联系人，E­mail：zyma@nju.edu.cn

 Study of ordered and controllable Ag nanoarrays on photoluminescence enhancement from a­SiNx∶O film

 Xu Qifeng，Zhang Xinxin，Ma Zhongyuan*，Wu Yangqing，Lin Zewen，Xu Ling，Li Wei，Chen Kunji，Huang Xinfan，Xu Jun，Feng Duan   

  • Published:2017-05-30
  • About author: School of Electronic Science and Engineering，Nanjing University，Nanjing，210093，China

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摘要：  采用聚苯乙烯(PS)纳米小球自组装技术结合激光退火方法制备了三种不同尺寸纳米银球阵列，研究不同尺寸纳米银球阵列对非晶掺氧氮化硅(a­SiNx∶O)薄膜的光致发光的影响．首先，在p型硅衬底上铺有三种不同尺寸的聚苯乙烯(PS)纳米小球，再采用磁控溅射系统蒸镀银薄膜，然后用激光对该银薄膜进行处理．最后，采用等离子体增强化学气相沉积(PECVD)系统在样品表面生长非晶掺氧氮化硅薄膜．实验结果表明，相比于未引入纳米银球阵列的a­SiNx∶O薄膜，引入170 nm、220 nm和300 nm银球阵列的a­SiNx∶O薄膜，其光致发光强度(PL)分别增强4.6、3.1和1.3倍．样品的原子力显微镜(AFM)图像显示，纳米银颗粒呈周期性排列且尺寸可控．荧光光谱分析表明，随着纳米银球阵列尺寸的增加，薄膜的发光峰位出现了红移．通过分光光度计UV­3600对a­SiNx∶O薄膜的消光谱进行了测量计算．为了进一步研究不同尺寸纳米银球阵列对非晶掺氧氮化硅(a­SiNx∶O)薄膜的光致发光的影响，对其消光谱和PL谱进行了对比分析．实验证实了a­SiNx∶O薄膜光致发光的增强来自于金属银局域表面等离激元(LSP)与a­SiNx∶O薄膜光发射之间的耦合．

关键词:  非晶掺氧氮化硅薄膜, 局域表面等离激元, 光致发光, 激光退火

Abstract:  Three different sizes of Ag nanoarrays were fabricated by combining nano­polystyrene(PS)self­assembling method and laser annealing technology.The purpose of this work is to investigate the effect of different sizes of Ag nanoarrays on the photoluminescence(PL)from amorphous oxidized Silicon nitride(a­SiNx∶O)films.Firstly，three different sizes of polystyrene(PS)nanometer sphere were paved on the p type Silicon substrate in this experiment，which was used as the patterned substrate subsequently.Secondly，the magnetron sputtering system was adopted to evaporate Ag films on the patterned substrate，which was following treated by laser radiation.Finally，the plasma enhanced chemical vapor deposition(PECVD)system was employed to grow the amorphous oxidized Silicon nitride films on the Ag nanoarrays which had been prepared before.The result of the experiment indicates that compared with the reference a­SiNx∶O film，the PL intensity from the a­SiNx∶O films by introduction of 170 nm，220 nm and 300 nm Ag nanoarrays are improved by 4.6，3.1 and 1.3 times，respectively.The atomic force microscope(AFM)was used to characterize morphology feature of the Ag nanoarrays and the AFM figures show that the Ag nanoarrays are distributed periodically and their sizes can be well controlled.The PL spectra show that the PL peak of a­SiNx∶O film appears red shift phenomenon with the increasement of the size of Ag nanoarrays.Spectrophotometer UV­3600 was used to measure the extinction spectra of the samples.For further researching the effect of different sizes of Ag nanoarrays on the photoluminescence improvement from a­SiNx∶O film，the extinction spectra and the photoluminescence spectra were taken into detailed calculation and analysis.The result of the experiment comfirms that the improvement of photoluminescence from a­SiNx∶O films is attributed to the coupling between Ag localized surface plasma(LSP)and the light emission from a­SiNx∶O films.

Key words: amorphous oxidized Silicon nitride film, localized surface plasma, photoluminescence, laser annealing

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